Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-12-20
2005-12-20
Watko, Julie Anne (Department: 2653)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
06977801
ABSTRACT:
A magnetoresistive device of the type with a pinned ferromagnetic layer and a free ferromagnetic layer separated by a nonmagnetic spacer layer has an exchange-coupled antiferromagnetic/ferromagnetic structure that uses a half-metallic ferromagnetic Heusler alloy with its near 100% spin polarization as the pinned ferromagnetic layer. The exchange-coupled structure includes an intermediate ferromagnetic layer between the AF layer and the pinned half-metallic ferromagnetic Heusler alloy layer, which results in exchange biasing. Magnetoresistive devices that can incorporate the exchange-coupled structure include current-in-the-plane (CIP) read heads and current-perpendicular-to-the-plane (CPP) magnetic tunnel junctions and read heads. The exchange-coupled structure may be located either below or above the nonmagnetic spacer layer in the magnetoresistive device.
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Carey Matthew J.
Childress Jeffrey R.
Maat Stefan
Hitachi Global Storage Technologies - Netherlands B.V.
Watko Julie Anne
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