Semiconductor device and manufacturing method thereof

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S296000, C430S942000

Reexamination Certificate

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06964832

ABSTRACT:
A method is provided for solving a problem that the fine processing property is degraded by an increase of a current applied to complementarily divided masks in an electron beam projection process. In the method, the complementarily divided masks used for electron projection are used whereby one mask is used for patterns requiring high dimensional accuracy and another is used for other patterns. Consequently, it is possible to lower the current applied to the patterns requiring high dimensional accuracy to realize high printing accuracy. In addition, the highly accurate patterns can be formed at a high throughput.

REFERENCES:
patent: 6117600 (2000-09-01), Nakasuji
patent: 6586341 (2003-07-01), Moniwa et al.
patent: 6709880 (2004-03-01), Yamamoto
patent: 08-236428 (1995-03-01), None
patent: 11-204422 (1998-01-01), None
Takeshi Yamaguchi, “EB Stepper—A High Throughput Electron-Beam Projection Lithography System”, Japanese Journal Applied Physics, vol. 39(2000), pp. 6897-6901.
Kazuaki Suzuki, et al., “Nikon EB stepper: its system concept and countermeasures for critical issues,” Proceedings of SPIE, vol. 3997 2000), pp. 214-224.
Hiroshi Yamashita, “Mask split algorithm for stencil mask in electron projection lithography”, J. Vac. Sci. Technol. B 19(6), Nov./Dec. 2001, pp. 2478-2481.

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