Method for calculating threshold voltage of pocket implant...

Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Electrical signal parameter measurement system

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C702S193000, C703S014000

Reexamination Certificate

active

06909976

ABSTRACT:
A threshold voltage model with an impurity concentration profile in a channel direction taken into account is provided in the pocket implant MOSFET. With penetration length of the implanted pocket in the channel direction and the maximum impurity concentration of the implant pocket used as physical parameters, the threshold voltage model is obtained by linearly approximating the profile in the channel direction. By analytically solving the model by using a new threshold condition with inhomogeneous profile taken into account, the threshold voltage can be accurately obtained. Based on thus obtained model, the threshold voltage can be predicted and can be used for circuit design.

REFERENCES:
patent: 4506436 (1985-03-01), Bakeman et al.
patent: 6304834 (2001-10-01), Enda
patent: 6581028 (2003-06-01), Hayashi
patent: 6594625 (2003-07-01), Hayashi
patent: 6690060 (2004-02-01), Horiuchi et al.
patent: 6697771 (2004-02-01), Kondo et al.
patent: 6709959 (2004-03-01), Kase et al.
patent: 2003/0122164 (2003-07-01), Komatsu
patent: 10-22502 (1998-01-01), None
Subramanian et al., “Reverse short channel effect and channel length dependence of boron penetration in PMOSFETs”, Dec. 1995, Electron Devices Meeting, 1995., International, pp. 423-426.
Hu et al, 2001 Symposium on VLSI Circuits Digest of Technical Papers, pp. 5-6 (2001).
Miura-Mattausch et al, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 15, No. 1, pp. 1-7 (1996).
Suetake et al, Precise Physical Modeling of the Reverse-Short-Channel Effect for Circuit Simulation, pp. 207-209 (1999).
Kitamaru et al, Proc. 2002 International Conference on Simulation of Semiconductor Processing and Devices, pp. 392-395 (2002).
Mirua-Mattausch et al, IEEE Transactions on Electron Devices, vol. 48, No. 10, pp. 2449-2452 (2001).
Mattausch et al, 2002 American Institute of Physics, vol. 80, No. 16, pp. 2994-2996 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for calculating threshold voltage of pocket implant... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for calculating threshold voltage of pocket implant..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for calculating threshold voltage of pocket implant... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3516081

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.