Semiconductor device with ohmic electrode formed on compound...

Details Semiconductor device with ohmic electrode formed on compound... Semiconductor device with ohmic electrode formed on compound...

2005-08-30

2005-08-30

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000, C438S046000

Reexamination Certificate

active

06936487

ABSTRACT:
A first film of rare-earth metal is formed on a semiconductor region of compound semiconductor exposed on a substrate. A second film essentially comprising silicon is formed on the surface of the first film. The first and second films are heated to silicidate at least a portion of the first film in contact with the second film. It is possible to lower the contact resistance of an ohmic electrode formed on semiconductor having a wide band gap.

REFERENCES:
patent: 4692348 (1987-09-01), Rubloff et al.
patent: 6323053 (2001-11-01), Nishikawa et al.
patent: 6750124 (2004-06-01), Mitan et al.

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