Fishing – trapping – and vermin destroying
Patent
1993-11-19
1996-06-11
Whipple, Matthew
Fishing, trapping, and vermin destroying
437241, H01L 21316, H01L 21318
Patent
active
055255507
ABSTRACT:
A silicon oxide film is formed by a CVD process, with the use of a silane group gas and water as a main feed gas. Further, a film including silanol is formed by the plasma CVD process with a specific plasma energy, using the silane group gas and water as the main feed gas. The specific plasma energy is selected at 40 (W.multidot..degree.C./cm.sup.2) or below. By annealing this film including silanol, or by performing the oxygen plasma process or the ammonia plasma process, the oxide film or the nitride film is formed.
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Fujitsu Limited
Whipple Matthew
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