Method for producing an acceleration sensor

Details Method for producing an acceleration sensor Method for producing an acceleration sensor

1993-04-21

1996-06-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437228, 437901, 437921, 148DIG28, 148DIG159, 1566271, 1566571, 216 86, 73777, H01L 213063, H01L 2178, H01L 2164

Patent

active

055255493

ABSTRACT:
A method for producing a semiconductor device that is capable of solving problems related to dicing a metal thin film used for electrochemical etching. According to the method, an n type epitaxial thin layer is formed on a p type single-crystal silicon wafer. An n.sup.+ type diffusion layer is formed in a scribe line area on the epitaxial layer. An n.sup.+ type diffusion layer is formed in an area of the epitaxial layer which corresponds to a predetermined portion of the wafer. An aluminum film is formed over the diffusion layers. The aluminum film has a clearance for passing a dicing blade. Portions of the wafer are electrochemically etched by supplying electricity through the aluminum film and the diffusion layers, to leave portions of the epitaxial layer. The wafer is diced into chips along the scribe line area. Each of the chips forms a separate semiconductor device. The electrochemical etching of the wafer is carried out after the formation of the aluminum film by immersing the wafer in a KOH aqueous solution and by supplying electricity through the aluminum film. The electrochemical etching is terminated at an inflection point where an etching current inflects to a constant level from a peak level. During the electrochemical etching, the diffusion layer reduces horizontal resistance in the epitaxial layer, so that the etched parts receive a sufficient potential to perform the etching.

REFERENCES:
patent: 5071510 (1991-12-01), Findler et al.
patent: 5095349 (1992-03-01), Fujii et al.
patent: 5172207 (1992-12-01), Nojiri et al.
patent: 5173149 (1992-12-01), Nojiri et al.
patent: 5202281 (1993-04-01), Ishibashi
patent: 5289721 (1994-03-01), Tanizawa et al.
patent: 5324688 (1994-06-01), Kondo
patent: 5408112 (1995-04-01), Tai et al.
Translation of JP 61-30039 (Hirata), Provided by the Applicant on PTO 1449.
S. K. Ghandhi, "VLSI Fabrication Principles" 1st ed., 1983, Wiley, pp. 617-619.
K. E. Petersen, Proceedings of the IEEE, 70, 5 (1982) 443 "Silicon as a Mechanical Material".
H. A. Waggener, "Electrochemically Controlled Thinning of Silicon", Bell System Technical Journal, vol. 50, 1970 pp. 473-475.
T. N. Jackson et al., "An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures", IEEE Electron Device Letter, Vo. EDL-2 No. 2, Feb. 1981, pp. 44-45.

Affiliated with

Also associated with

Rating

Method for producing an acceleration sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for producing an acceleration sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing an acceleration sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-351501