Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2005-06-28
2005-06-28
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S002000, C216S041000, C216S049000, C216S047000, C216S051000, C438S003000, C438S696000, C438S700000
Reexamination Certificate
active
06911156
ABSTRACT:
A method for fabricating a magnetic memory element structure comprises providing a dielectric layer having a conducting via. A first magnetic layer is formed overlying the dielectric layer and is in electrical communication with the conducting via. A non-magnetic layer and a second magnetic layer are formed overlying the first magnetic layer. A first conductive layer is deposited overlying the second magnetic layer and is patterned. A portion of the second magnetic layer is exposed and is transformed to form an inactive portion and an active portion. The active portion comprises a portion of a memory element and the inactive portion comprises an insulator. A sidewall spacer is formed about at least one sidewall of the first conductive layer and a masking tab is formed that overlies a portion of the memory element and extends to overlie at least a portion of the conducting via.
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Butcher Brian R.
Durlam Mark A.
Grynkewich Gregory W.
Kyler Kelly
Smith Kenneth H.
Alanko Anita
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
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