Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-11-01
2005-11-01
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S238000, C438S239000, C438S386000, C438S399000
Reexamination Certificate
active
06960479
ABSTRACT:
The present invention relates to a ferroelectric polymer storage device including at least two stacked ferroelectric polymer memory structures that are arrayed next to at least two respective stacked topologies that are a pre-fabricated silicon substrate cavity that includes interlayer dielectric layers and via structures. Combining ferroelectric polymer and ferroelectric oxide layers on the pre-fabricated silicon substrate cavity forms a multi-rank structure.
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Li Jian
Mu Xiao-Chun
Intel Corporation
Martinez Tony M.
Pham Long
Rao Shrinivas H.
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