Method for making a semiconductor device having anti-reflective

Details Method for making a semiconductor device having anti-reflective Method for making a semiconductor device having anti-reflective

1995-02-24

1996-06-11

Fourson, George

Fishing, trapping, and vermin destroying

437187, 437192, 437193, 437194, 148DIG113, H01L 2128

Patent

active

055255426

ABSTRACT:
An anti-reflective coating (ARC) (20) is formed over a reflective, conductive layer (18), such as polysilicon or aluminum, in a semiconductor device (10). The ARC is an aluminum nitride layer. During photolithography, the ARC absorbs radiation waves (30), particularly absorbing wavelengths under 300 nanometers, such as deep ultraviolet (DUV) radiation at 248 nanometers. Being absorbed by the ARC, the radiation waves are prevented from reflecting off the underlying conductive layer. Thus, resist mask (34) is patterned and developed true to the pattern on lithography mask (24), resulting in accurate replication into appropriate layers of the device.

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