Method for forming a light emitting diode for use as an efficien

Details Method for forming a light emitting diode for use as an efficien Method for forming a light emitting diode for use as an efficien

1995-03-29

1996-06-11

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437127, 437128, 437130, 117 57, 117 61, H01L 21208

Patent

active

055255396

ABSTRACT:
An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga.sub.1-x Al.sub.x As semiconductor material with two semiconductive regions that form a p-n junction. The value of x (the amount of aluminum in the semiconductive material Ga.sub.1-x Al.sub.x As) is varied monotonically as the material is grown so that x decreases monotonically from a value greater than approximately 0.08 at the diode surface on the N side of the p-n junction to a value not less than zero at the diode surface on the P side of the junction. The value of x at the p-n junction is greater than 0 and less than approximately 0.08 as a result of a high initial growth temperature of at least about 930 degrees Celsius. A wavelength matched emitter and detector system is realized by adjusting the present diode's initial growth temperature so that its detector response curve substantially overlaps the emission curve of a second diode.

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Dawson, "High Efficiency Graded-Band-Gap Ga.sub.1-x Al.sub.2 As Light-Emitting Diodes", Journal of Applied Physics, vol. 48, No. 6 (1977), pp. 2485-2492.

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