Substrate having built-in semiconductor apparatus and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond

Reexamination Certificate

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Details

C438S584000, C438S647000, C438S648000, C438S684000, C438S685000, C438S657000, C438S524000

Reexamination Certificate

active

06969916

ABSTRACT:
A substrate having a built-in semiconductor apparatus includes: a semiconductor apparatus which comprises a first semiconductor chip having a first electrode pad formed on a main surface thereof, a protruding portion which is in contact with the first semiconductor chip and protrudes from a side surface of the first semiconductor chip to the outside, an apparatus wiring portion which is provided so as to extend from the first electrode pad onto a surface of the protruding portion, a conductive portion which is in connected with the apparatus wiring portion and provided on the apparatus wiring portion, and a sealing layer which covers the main surface and the surface of the protruding portion so as to expose a top face of the conductive portion; an insulating layer in which the semiconductor apparatus is embedded; an external terminal provided on the insulating layer; and a substrate wiring portion which electrically connects the conductive portion with the external terminal.

REFERENCES:
patent: 6750125 (2004-06-01), Ohuchi
patent: 2002-170827 (2002-06-01), None

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