Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-09
2005-08-09
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S714000, C438S725000, C438S734000
Reexamination Certificate
active
06927175
ABSTRACT:
A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating material to the first insulating material being greater than 1. Accordingly, undercut of the first and second insulating materials can be prevented. This stabilizes the step coverage of a subsequently formed transparent electrode.
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Gebremariam Samuel A.
Lee Eddie
LG. Philips LCD Co. Ltd.
McKenna Long & Aldridge LLP
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