Method for manufacturing a thin film

Details Method for manufacturing a thin film Method for manufacturing a thin film

2005-08-23

2005-08-23

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S846000, C310S311000, C204S192180

Reexamination Certificate

active

06931701

ABSTRACT:
A method for manufacturing a thin film is performed such that the internal stress is controlled while the preferred orientation property is maintained at a high value. An AlN piezoelectric thin film is formed on a substrate by a sputtering method using a mixed gas including Ar and nitrogen, wherein the mixed gas has a nitrogen flow rate ratio, that is, nitrogen flow rate relative to the sum of the Ar flow rate and the nitrogen flow rate, of about 10% to about 75%.

REFERENCES:
patent: 4961820 (1990-10-01), Shinagawa et al.
patent: 5370299 (1994-12-01), Tanabe et al.
patent: 5429731 (1995-07-01), Osano et al.
patent: 5516027 (1996-05-01), Tanabe et al.
patent: 5652037 (1997-07-01), Ohkawa et al.
patent: 6033537 (2000-03-01), Suguro
patent: 6045626 (2000-04-01), Yano et al.
patent: 1 106 708 (2001-06-01), None
patent: 62-214167 (1987-09-01), None
patent: 03-140684 (1992-11-01), None
patent: 4-341005 (1992-11-01), None
patent: 7-316809 (1995-12-01), None
patent: 06-284654 (1996-06-01), None
patent: 8-148957 (1996-06-01), None
patent: 8-239752 (1996-09-01), None
F. Engelmark et al.; “Synthesis of highly oriented piezoelectric AIN films by reactive sputter deposition”; 46thNational Symposium of the American Vacuum Society, Vacuum, Surfaces, and Films, Seattle, WA, USA, Oct. 25-29, 1999; vol. 18, No. 4, Pt. 1-2, pp 1609-1612; XP002184424; Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films); Jul.-Aug. 2000; AIP for American Vacuum Soc, USA.
Naik et al; “Measurements of the bulk, C-axis electromechanical coupling constant as a function of AIN film quality”; IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Jan. 2000, IEEE, USA; vol. 47, No. 1, PP 292-296; XP002184425.
Akiyama et al; Preparation of highly oriented AIN thin films on glass substrates by helicon plasma sputtering and design of experiments:, Thin Solid Films, Elsevier-Sequoia S.A. Lausanne, CH; vol. 350, No. 1-2; Aug. 15, 1999; PP 85-90; XP004180595.
Okano et al; “Preparation of c-axis oriented AIN thin films by low-temperature reactive sputtering” Japanese Journal of Applied Physics; Part 1(Regular Papers & Short Notes); Oct. 1992, Japan; vol. 31, No. 10, pp. 3446-3451; XP001037814.
R. S. Naik et al.; “Low-temperature deposition of highly textured aluminum nitride by direct current magnetron sputtering for applications in thin-film resonators”; Journal of the Electrochemical Society; Feb. 1999; Electrochem. Soc, USA; vol. 146, No. 2, PP. 691-696, XP002184426.
Ju-Won Soh et al.; “Substrate effects on the epitaxial growth of AIN thin films using electron cyclotron resonance plasma enhanced chemical vapor deposition”; Japanese Journal of Applied Physics, Part 2 (Letters), Nov. 15, 1996; Publication Office; Japanese Journal Appl. Phys, Japan; vol. 35, No. 11B, PP. L1518-L1520; XP001037724.
K S Stevens et al.; “Microstructure of AIN on SI (111) grown by plasma-assisted molecular beam epitaxy”; Applied Physics Letters; American Institute of Physics; New York; US; vol. 65, No. 3, Jul. 18, 1994; PP. 321-323; XP000464829.

Affiliated with

Also associated with

Rating

Method for manufacturing a thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3513669