Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-02-15

2005-02-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257S640000

Reexamination Certificate

active

06856019

ABSTRACT:
A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.

REFERENCES:
patent: 6400023 (2002-06-01), Huang
patent: 6507081 (2003-01-01), Smith et al.
patent: 6646351 (2003-11-01), Watanabe et al.
patent: 20010045651 (2001-11-01), Saito et al.
patent: 20020013062 (2002-01-01), Shimizu et al.
patent: 2000-277520 (2000-10-01), None

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