Method of producing a semiconductor device using a reticle havin

Details Method of producing a semiconductor device using a reticle havin Method of producing a semiconductor device using a reticle havin

1995-01-05

1996-06-11

Fourson, George

Fishing, trapping, and vermin destroying

437228, 437919, 437948, 148DIG106, H01L 2170, H01L 2700

Patent

active

055255345

ABSTRACT:
A method of producing a semiconductor device includes the steps of (a) preparing a substrate having a semiconductor element formed in a predetermined region of a surface of the substrate, (b) forming a first layer on the substrate, where the first layer is made of silicon oxide including at least one of boron and phosphor, (c) forming a second layer on a surface of the first layer, where the second layer is made of a material selected from a group consisting of silicon nitride and silicon oxide nitride, (d) coating a resist layer on the entire surface of the substrate, (e) exposing and developing a predetermined region of the resist layer using a reticle having a first opening so as to form a second opening in the resist layer, where the first opening has a polygonal shape having n corners respectively having obtuse angles and n is a natural number satisfying n.gtoreq.5, and (f) etching the second and first layers via the second opening.

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"3-Dimensional Stacked Capacitor Cell for 16M and 64M DRAMS", Ema et al, IEDM Technical Digest, 1988, pp. 592-595.
"A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts", Itabashi et al, IEDM Technical Digest, 1991, pp. 477-480.

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