SOI DRAM with field-shield isolation

Details SOI DRAM with field-shield isolation SOI DRAM with field-shield isolation

1995-06-05

1996-06-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

055255310

ABSTRACT:
An SOI deep-trench DRAM having body contacts and field shield isolation makes contact between the SOI device layer and a buried conductive layer below the insulating layer at selected sites between adjacent deep trench capacitors. The buried layer may be biased to provide better attraction for holes.

REFERENCES:
patent: 5369049 (1994-11-01), Acocella et al.
patent: 5384277 (1995-01-01), Hsu et al.

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