Method for manufacturing CMOS image sensor using spacer...

Details Method for manufacturing CMOS image sensor using spacer... Method for manufacturing CMOS image sensor using spacer...

2005-12-13

2005-12-13

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

active

06974715

ABSTRACT:
A method for fabricating a CMOS image sensor including a low voltage buried photodiode and a transfer transistor, includes the steps of: forming a field oxide for defining active area and field area on certain area of an epitaxial layer formed on a substrate, and forming a gate of transfer transistor on the epitaxial layer of the active area; forming the low voltage buried photodiode doping region in alignment with one side of the gate of transfer transistor and field oxide; forming a spacer insulation layer by stacking layers of oxide and nitride over the whole structure; forming a spacer block mask to open areas excluding doping region for the low voltage buried photodiode; and removing the spacer block mask, and forming a floating diffusion region on other side of the transfer transistor. Alternatively, the sacrificial nitride may be allowed to remain on the surface of the photodiode to improve optical properties for short wavelength lights.

REFERENCES:
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 6180969 (2001-01-01), Yang et al.
patent: 6611037 (2003-08-01), Rhodes
Van Zant, Peter: Microchip Fabrication (2000), McGraw-Hill, Fourth Edition, pp. 244-245.
Furumiya et al.,High-Sensitivity and No-Crosstalk Pixel Technology for Embedded CMOS Image Sensor, IEEE Transactions on Electron Devices, vol. 48, No. 10, Oct. 2001, pp. 2221-2227.
Nallapati et al.,Influence of Plasma Induced Damage During Active Etch on Silicon Defect Generation, 2000 5thInternational Symposium on Plasma Process-Induced Damage, May 23-24, Santa Clara, CA, USA, 2000 American Vacuum Society, pp. 61-64.

Affiliated with

Also associated with

Rating

Method for manufacturing CMOS image sensor using spacer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing CMOS image sensor using spacer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing CMOS image sensor using spacer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3512828