Methods for improving well to well isolation

Details Methods for improving well to well isolation Methods for improving well to well isolation

2005-08-23

2005-08-23

Pert, Evan (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Reexamination Certificate

active

06933203

ABSTRACT:
Methods are provided for forming wells in a semiconductor wafer, in which p-wells and n-wells are formed in a substrate, and first p-type dopants are implanted into n-well regions while an n-well mask remains over the wafer to selectively decrease a substrate resistivity in the n-well regions beneath the n-wells. A subsequent blanket implantation provides second p-type dopants into isolation regions of the substrate beneath isolation structures, where the first and second p-type dopants improve well to well isolation without addition of extra masks to the fabrication process.

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