Semiconductor device having a folded layer structure

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Groove

Reexamination Certificate

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C257S623000, C257S190000, C438S978000

Reexamination Certificate

active

06930376

ABSTRACT:
An upper reflecting layer in a main region, a first support region and a second support region is separated from an upper reflecting layer in the surrounding region by separating grooves. The first support region and the second support region are folded in a valley shape from a substrate at grooves, and the first support region, the second support region and the main region are folded in a mountain shape, and the upper reflecting layer in the main region faces parallel to the substrate with spacing.

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patent: 4830984 (1989-05-01), Purdes
patent: 5613022 (1997-03-01), Odhner et al.
patent: 5855998 (1999-01-01), Tanabe et al.
patent: 6051063 (2000-04-01), Tanabe et al.
patent: 6221739 (2001-04-01), Gorelik
patent: 6534838 (2003-03-01), Vaccaro
patent: 6646364 (2003-11-01), Horning et al.
patent: 2003/0173583 (2003-09-01), Kubota
patent: 08114408 (1996-05-01), None

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