Recessed shallow trench isolation structure nitride liner...

Details Recessed shallow trench isolation structure nitride liner... Recessed shallow trench isolation structure nitride liner...

2005-11-01

2005-11-01

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S511000, C257S512000, C257S513000, C257S516000

Reexamination Certificate

active

06960818

ABSTRACT:
A method for reducing hot carrier reliability problems within an integrated circuit device. The method includes forming a shallow trench isolation structure incorporated with the device by filling a trench with a photoresist plug and removing a portion of the photoresist plug to a level below the depth of a channel also incorporated with the device. A nitride liner disposed within the trench under the photoresist plug is then recessed to a level substantially equal to the level of the photoresist material, which is then removed. The method further includes the deposition of oxide fill within the trench, thereby encapsulating the recessed nitride liner.

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