Measuring and testing – Fluid pressure gauge – Diaphragm
Reexamination Certificate
2005-08-16
2005-08-16
Oen, William (Department: 2855)
Measuring and testing
Fluid pressure gauge
Diaphragm
Reexamination Certificate
active
06928878
ABSTRACT:
A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.
REFERENCES:
patent: 4730496 (1988-03-01), Knecht et al.
patent: 4777826 (1988-10-01), Rud, Jr. et al.
patent: 4799088 (1989-01-01), Hiyamizu et al.
patent: 4922310 (1990-05-01), Colquhoun
patent: 5365078 (1994-11-01), Hayashi et al.
patent: 5515732 (1996-05-01), Willcox et al.
patent: 5677553 (1997-10-01), Yamamoto et al.
patent: 6611002 (2003-08-01), Weeks et al.
patent: 6617060 (2003-09-01), Weeks, Jr. et al.
patent: 6649287 (2003-11-01), Weeks, Jr. et al.
patent: 2003/0119220 (2003-06-01), Mlcak et al.
Statement by Applicant with Attachment A.
Eickhoff, M. et al., “Novel Sensor Applications of group-III nitrides,” Materials Research Society Symp. Proc., vol. 693, pp. 781-792 (2002).
Gaska, R. et al., “Piezoresistive effect in metal-semiconductor-metal structures on p-type GaN,” Applied Physics Letters, vol. 76, No. 26, pp. 3956-3958 (Jun. 26, 2000).
Gaska, R. et al., “The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures,” Applied Physics Letters, vol. 72, No. 1, pp. 64-66 (Jan. 5, 1998).
Vescan, A. et al., “MBE grown AIGaN/GaN MODFETs with high breakdown voltage,” International MBE Conference (1998); Journal of Crystal Growth (1999).
Akasaki, I., “The Evolution of Nitride Semiconductors,” Materials Research Society Symp. Proc., vol. 482, pp. 3-14 (1998).
Hickman, R. et al., “Uniformity and High Temperature Performance of X-Band Nitride Power HEMTs Fabricated from 2-inch Epitaxy,” Solid State Electronics, vol. 42, Issue 12, pp. 2183-2185 (Dec. 1998).
Gaska, R. et al., “Piezoresistive effect in GaN-AIN-GaN structures,” Applied Physics Letters, (1997).
Bykhovski, A. D. et al., “Piezoresistive effect in wurtzite n-type GaN,” Applied Physics Letters, vol. 68, No. 6, pp. 818-819 (Feb. 5, 1996).
Eriksen Odd Harald Steen
Guo Shuwen
Oen William
Rosemount Aerospace Inc.
Thompson Hine LLP
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