Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-08-30
2005-08-30
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
Reexamination Certificate
active
06936523
ABSTRACT:
The present invention relates to a method for manufacturing a heterogeneous material structure. The method includes forming a predetermined detachment area in a source substrate, and bonding the source substrate to a handle substrate to form a source-handle structure. The source-handle-structure is then annealed at a first energy level that is lower than the energy of a thermal detachment budget and stopping before detachment of the source substrate. Lastly, the source-handle-structure is annealed at a second energy level that is lower than the first energy level at least until the substrate detaches at the predetermined detachment area.
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Berne Cecile
Ghyselen Bruno
Lagahe Chrystelle
Maurice Thibaut
Commisariat à l'énergie Atomique (CEA)
Pert Evan
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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