Method for producing group III nitride compound...

Details Method for producing group III nitride compound... Method for producing group III nitride compound...

2005-12-27

2005-12-27

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S483000, C438S718000

Reexamination Certificate

active

06979584

ABSTRACT:
A first Group III nitride compound semiconductor layer31is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/post. Thus, a second Group III nitride compound layer32can be epitaxially grown, vertically and laterally, from a top surface of the post and a sidewall/sidewalls of the trench serving as a nucleus for epitaxial growth, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer31can be prevented in the upper portion of the second Group III nitride compound semiconductor32that is formed through lateral epitaxial growth. As a result, a region having less threading dislocations is formed at the buried trench.

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