Method of forming tunnel oxide film in semiconductor device

Details Method of forming tunnel oxide film in semiconductor device Method of forming tunnel oxide film in semiconductor device

2005-02-22

2005-02-22

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S424000, C438S735000

Reexamination Certificate

active

06858543

ABSTRACT:
The present invention relates to a method of forming a tunnel oxide film in a semiconductor device, in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface roughness on a substrate and contamination caused by absorbed carbon components which are generated when the oxide film and the photo resist film are removed. Therefore, it is possible to form a tunnel oxide film having an excellent film quality.

REFERENCES:
patent: 5538923 (1996-07-01), Gardner et al.
patent: 6146948 (2000-11-01), Wu et al.
patent: 6147008 (2000-11-01), Chwa et al.
patent: 6573141 (2003-06-01), Kickel et al.

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