Semiconductor laser device and method of fabricating the same

Details Semiconductor laser device and method of fabricating the same Semiconductor laser device and method of fabricating the same

2005-06-07

2005-06-07

Harvey, Mingun O (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013

Reexamination Certificate

active

06904071

ABSTRACT:
An n-contact layer, an n-cladding layer, an MQW active layer, and a p-first cladding layer are formed in this order on a sapphire substrate. An n-current blocking layer having a striped opening is formed on the p-first cladding layer. The width of the striped opening gradually increases from W2to W1as the depth thereof decreases from a lower layer to an upper layer in the current blocking layer. A p-second cladding layer is formed on the n-current blocking layer and on the p-first cladding layer inside the striped opening. The p-second cladding layer comprises a lower layer having the width W2at its lower end and an upper layer having a width W1lager than the width W2.

REFERENCES:
patent: 5390205 (1995-02-01), Mori et al.
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5742629 (1998-04-01), Nishikawa et al.
patent: 5822348 (1998-10-01), Fujii
patent: 5835516 (1998-11-01), Miyashita et al.
patent: 5920586 (1999-07-01), Nagai
patent: 5956361 (1999-09-01), Ikeda et al.
patent: 5987048 (1999-11-01), Ishikawa et al.
patent: 6064079 (2000-05-01), Yamamoto et al.
patent: 6111275 (2000-08-01), Hata
patent: 6118801 (2000-09-01), Ishikawa et al.
patent: 6208681 (2001-03-01), Thornton
patent: 6238947 (2001-05-01), Shakuda
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6284559 (2001-09-01), Hata
patent: 6298079 (2001-10-01), Tanaka et al.
patent: 6317446 (2001-11-01), Wipiejewski
patent: 6320893 (2001-11-01), Ueki
patent: 6522676 (2003-02-01), Goto et al.
patent: 0 851 542 (1998-07-01), None
patent: 60-3181 (1985-01-01), None
patent: 60003181 (1985-01-01), None
patent: 60-003181 (1985-09-01), None
patent: 6-085381 (1994-03-01), None
patent: 6-196812 (1994-07-01), None
patent: 8-250805 (1996-09-01), None
patent: 9-036491 (1997-02-01), None
patent: 10-084165 (1998-03-01), None
patent: 10-93199 (1998-04-01), None
patent: 9-097950 (1998-04-01), None
patent: 10-294534 (1998-11-01), None
patent: 02001068786 (2001-03-01), None
Copy of Notice of Reasons for Refusal in the counterpart Japanese application (JP2000-063271) dated Apr. 15, 2003 and translation.
European Search Report dated Sep. 3, 2003 in corresponding application No. EP 00 30 2341.
IEEE Journal of Quantum Electronics, vol. 29, No. 5, May 1993, pp. 1330-1336.

Affiliated with

Also associated with

Rating

Semiconductor laser device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3510207