Thin film capacitor and fabrication method thereof

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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C361S311000, C361S303000, C438S239000

Reexamination Certificate

active

06909592

ABSTRACT:
The present invention is directed to a method for fabricating a thin film capacitor of a metal/insulator/metal (MIM) structure, which is capable of enabling small-sizing of a semiconductor device while maintaining electrostatic capacity of a capacitor. The method comprises the steps of: forming a heterogeneous film on a lower insulation film on a structure of a semiconductor substrate; forming a plurality of projections by selectively etching the heterogeneous film; and forming a first electrode layer, a dielectric layer, and a second electrode layer on the lower insulation including the plurality of projections in order along a surface shape of the projections such that a plurality of projecting parts are formed in the first electrode layer, the dielectric layer and the second electrode layer, respectively.

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