Patent
1990-07-02
1992-08-11
Hille, Rolf
357 75, 357 45, H01L 2708, H01L 2710, H01L 2724
Patent
active
051384272
ABSTRACT:
Since the power-supply and/or signal-transmission wiring layers connected to the semiconductor chip regions are formed, each individual integrated circuit can be burned in on the semiconductor wafer and, in other words, an integrated circuit can be burned in on a wafer level. The integrated circuit can thus be burned in at the end of a wafer process. An assembled semiconductor device is subjected to a high temperature or a high humidity, for checking the reliability of the assembled device.
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Clark S. V.
Hille Rolf
Kabushiki Kaisha Toshiba
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