Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-08-09
2005-08-09
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S352000
Reexamination Certificate
active
06927473
ABSTRACT:
Fuses for integrated circuits and semiconductor devices, methods for making and using the same, and semiconductor devices containing the same. The semiconductor fuse contains two conductive layers, an overlying and underlying layer, on an insulating substrate. The underlying layer comprises titanium nitride and the overlying layer comprises tungsten silicide. The semiconductor fuse may be fabricated during manufacture of a local interconnect structure containing the same materials. The fuse, which may be used to program redundant circuitry, is blown by electrical current rather than laser beams, thus allowing the fuse width to be smaller than prior art fuses blown by laser beams. The fuse may also be blown by less electrical current than the current required to blow conventional polysilicon fuses having similar dimensions.
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Fukuda, Yukio, et al.,A New Fusible-Type Programmable Element Composed of Aluminum and Polysilicon. IEEE Transactions on Electron Devices, vol. ED-33, No. 2, Feb. 1986.
Trivedi Jigish
Violette Michael P.
Wang Zhongze
Estrada Michelle
Fourson George
Micro)n Technology, Inc.
TraskBritt
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