Semiconductor device having first and second type field effect t

Details Semiconductor device having first and second type field effect t Semiconductor device having first and second type field effect t

1990-10-31

1992-08-11

Carroll, J.

357 43, 357 44, 357 46, 357 48, 357 88, H01L 2702, H01L 2704

Patent

active

051384205

ABSTRACT:
A complementary field effect element develops an intensified latch-up preventive property even if the distance between the emitters of parasitic transistors is short, and a method of producing the same are disclosed. The complementary field effect element includes a high concentration impurity layer (16) formed by ion implantation in the boundary region between a P-well (2) and an N-well (3) which are formed adjacent each other on the main surface of a semiconductor substrate (1). Therefore, carriers passing through the boundary region between the P-well (2) and the N-well (3) are decreased, so that even if the distance between the emitters (4, 5) of parasitic transistors is short, there is obtained an intensified latch-up preventive property.

REFERENCES:
patent: 4786960 (1988-11-01), Jeuch
patent: 4805008 (1989-02-01), Yao et al.
Cheung et al., "Buried Dopant and Defect Layers For Device Structures With High-Energy Ion Implantation", Nuclear Instruments and Methods in Physics Research, (1989), pp. 941-950.

Affiliated with

Also associated with

Rating

Semiconductor device having first and second type field effect t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having first and second type field effect t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having first and second type field effect t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-350630