Non-volatile semiconductor memory device with NAND string...

Details Non-volatile semiconductor memory device with NAND string... Non-volatile semiconductor memory device with NAND string...

2005-02-01

2005-02-01

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185120, C365S185110, C365S185270

Reexamination Certificate

active

06850439

ABSTRACT:
A non-volatile semiconductor memory device includes: a memory cell array having NAND strings arranged therein, each NAND string having a plurality of electrically rewritable and non-volatile memory transistors connected in series; and an erase/write/read control circuit configured to perform erasing, writing and reading of the memory cell array, wherein at least one memory transistor within each NAND string of the memory cell array is controlled as a block separation transistor for dividing the memory cell array into a plurality of blocks each serving as a unit of data erasure.

REFERENCES:
patent: 6295227 (2001-09-01), Sakui et al.
patent: 6411548 (2002-06-01), Sakui et al.
patent: 11-176177 (1999-07-01), None
patent: 2000222895 (2000-08-01), None
patent: 2002026153 (2002-01-01), None

Affiliated with

Also associated with

Rating

Non-volatile semiconductor memory device with NAND string... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile semiconductor memory device with NAND string..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile semiconductor memory device with NAND string... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3506168