Method for manufacture of MRAM memory elements

Details Method for manufacture of MRAM memory elements Method for manufacture of MRAM memory elements

2005-06-07

2005-06-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S003000, C438S073000

Reexamination Certificate

active

06902940

ABSTRACT:
A magnetic memory element has reduced demagnetization coupling between a pinned layer and a free layer. The element includes a pinned ferromagnetic layer and a free ferromagnetic layer which are separated by a barrier layer. The pinned layer is pinned by an antiferromagnetic layer. An offset ferromagnetic layer is provided on a side of the antiferromagnetic layer opposite the pinned ferromagnetic layer to reduce demagnetization coupling between the free ferromagnetic layer and the pinned ferromagnetic layer.

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patent: 2002/0030489 (2002-03-01), Lenssen et al.
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