Method of manufacturing a semiconductor device having a silicide

Details Method of manufacturing a semiconductor device having a silicide Method of manufacturing a semiconductor device having a silicide

1992-02-03

1993-03-16

Quach, T. N.

Fishing, trapping, and vermin destroying

437238, 148DIG19, 148DIG118, H01L 21283

Patent

active

051944057

ABSTRACT:
A method of manufacturing semiconductor devices wherein a silicon compound is formed on a silicon substrate, the silicon compound having a thickness less than 50.ANG.. Next, a metal film is formed on the silicon compound film, then, a two step annealing process which includes a low temperature annealing followed by a high temperature annealing is performed. A metal silicide film may be formed with high selectivity on the silicon substrate by forming a silicide layer on the silicon compound.

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patent: 4657628 (1987-04-01), Holloway et al.
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patent: 4784973 (1988-11-01), Stevens et al.
patent: 4816425 (1989-03-01), McPherson
Li, B. et al., "Selective Titanium Silicide Formation . . . ", 1046B Extended Abstracts, Spring 1987, No. 1, p. 342.
Ma, J. et al., "Backscattering-Analysis of the Successive Layer . . . ", Thin Solid Films, vol. 64, No. 3, 1979, pp. 41-439-444.

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