Method of producing a substrate having semiconductor-on-insulato

Fishing – trapping – and vermin destroying

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437 11, 437 12, 437 62, 148DIG60, H01L 21306

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active

051943956

ABSTRACT:
A substrate has a semiconductor-on-insulator structure. The substrate has a base substrate, an insulator layer provided on the base substrate, an active substrate provided on the insulator layer and having gettering sites, and an active layer provided on the active substrate and made of a semiconductor. The gettering sites under the active layer eliminate crystal defects and impurities generated in the active layer during the semiconductor device production in which elements are formed in the active layer.

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"Gettering Technique Resulting in Defect-Free Devices", M. R. Poponiak and T. H. Yeh, IBM Technical Disclosure Bulletin, vol. 16, No. 4, Sep. 1973, p. 1023.

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