Thyristor and method of manufacturing the same

Details Thyristor and method of manufacturing the same Thyristor and method of manufacturing the same

1992-01-30

1993-03-16

Quach, T. N.

Fishing, trapping, and vermin destroying

437149, 148DIG126, H01L 21332

Patent

active

051943948

ABSTRACT:
A thyristor of the present invention turns on by applying a specified voltage to a first control electrode and turns off by applying a specified voltage to a second control electrode. These first and second control electrodes are independent of each other, so that the turning-on and turning-off conditions can be determined independently. When a transistor having the second control electrode is turned on by applying the specified voltage to the second control electrode until just before the turning-on, a first main electrode and a first semiconductor region can be electrically connected, so that the back gate potential of the transistor having the first control electrode can be fixed at the potential of the first main electrode.

REFERENCES:
patent: 4644637 (1987-02-01), Temple
patent: 4760431 (1988-07-01), Nakagawa et al.
patent: 4847671 (1989-07-01), Pattanayaki et al.
patent: 4857977 (1989-08-01), Temple
patent: 4912541 (1990-03-01), Balig et al.
patent: 4963972 (1990-10-01), Shinohe et al.
Nakagawa et al., "Safe Operating Area . . . ", IEEE Trans. Elec. Dev. vol. ED-34, No. 2, Feb. 1987, pp. 351-354.
IEEE Transactions on Electron Devices, vol. ED-34, No. 2, Feb. 1987, "Safe Operating Area for 1200-V Nonlatchup Bipolar-Mode Mosfet's" by Akio Nakagawa, Member, IEEE; Yoshiro Yamaguchi; Kiminori Watanabe; and Hiromichi Ohoshi, Member, IEEE.

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