Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2005-11-15

2005-11-15

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000, C257S443000

Reexamination Certificate

active

06965135

ABSTRACT:
A solid-state imaging device having, in each of unit pixels, an on-chip microlens composed of plural convex lens parts for each of photoelectric conversion elements provided on a semiconductor chip is disclosed. A floating diffusion part and a signal-charge read gate for taking out a signal charge from the photoelectric conversion element are provided on a region positioned in a boundary of each convex lens part of the on-chip microlens. A wiring for the floating diffusion part and a wiring for the read gate are provided along the respective boundaries of the convex lens parts of the on-chip microlens. In this device, the film thickness of the on-chip microlens can be reduced with regard to the area of each unit pixel, thereby facilitating the process control and enhancing the light transmission efficiency. It is also possible to enhance the circuit wiring efficiency in each unit pixel while avoiding any incomplete charge transfer to consequently improve the picture quality.

REFERENCES:
patent: 5796154 (1998-08-01), Sano et al.
patent: 6288388 (2001-09-01), Zhang et al.
patent: 6674470 (2004-01-01), Tanaka et al.
patent: 6900480 (2005-05-01), Sugiyama

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