Method for metallizing through holes in thin film substrates, an

Coating processes – With stretching or tensioning

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419214, 427 97, 427 99, 427172, 427250, 427322, 4273982, 427404, 427409, B05D 512, B05D 312

Patent

active

055253695

ABSTRACT:
A method for vapor phase depositing a thin seed layer of, for example, chromium and copper onto the side walls of through holes in thin film substrates of, for example, polyimide is disclosed. This method is useful in fabricating devices such as a thin film semiconductor chip carrier in which a semiconductor chip mounted on one major surface of the chip carrier is electrically connected to a ground plane and/or a power conductor on the other major surface of the chip carrier via one or more metallized through holes.

REFERENCES:
patent: 3881884 (1975-05-01), Cook
patent: 4446170 (1984-05-01), Watanabe
patent: 4489124 (1984-12-01), Watanabe
patent: 4569902 (1986-02-01), Saito
patent: 4661229 (1987-04-01), Hemming
patent: 4886681 (1989-12-01), Clabes
patent: 4917963 (1990-04-01), Kittler
patent: 5013402 (1991-05-01), Yarita
patent: 5151304 (1992-09-01), Lee
patent: 5196100 (1993-03-01), Goffetre
patent: 5274521 (1993-12-01), Miyauchi
patent: 5302492 (1994-04-01), Ott

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for metallizing through holes in thin film substrates, an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for metallizing through holes in thin film substrates, an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for metallizing through holes in thin film substrates, an will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-350419

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.