Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-02-22
2005-02-22
Leung, Quyen (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C438S022000
Reexamination Certificate
active
06859476
ABSTRACT:
A surface-emitting semiconductor laser having a light-emitting region and a non-light-emitting region, the light-emitting region emitting light in a direction perpendicular to a semiconductor substrate. The light-emitting region includes a resonator formed on the semiconductor substrate. The non-light-emitting region includes a contact region electrically connected to the resonator. The contact region is formed in a layer which is part of a layer including at least part of the resonator but is apart from the part of the resonator, and the contact region has a higher carrier density than the layer in which the contact region is formed.
REFERENCES:
patent: 4999843 (1991-03-01), Luryi et al.
patent: 5073041 (1991-12-01), Rastani
patent: 5319655 (1994-06-01), Thornton
patent: 5394423 (1995-02-01), Kasahara
patent: 5468656 (1995-11-01), Shieh et al.
patent: 5703898 (1997-12-01), Ogura
patent: 6594295 (2003-07-01), Sargent
U.S. Appl. No. 10/092,777, filed Mar. 8, 2002, Kaneko et al.
Leung Quyen
Oliff & Berridg,e PLC
Seiko Epson Corporation
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