Methods of producing a heterogeneous semiconductor structure

Details Methods of producing a heterogeneous semiconductor structure Methods of producing a heterogeneous semiconductor structure

2005-02-22

2005-02-22

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000

Reexamination Certificate

active

06858517

ABSTRACT:
The present invention relates to a method for forming a heterogeneous assembly of first and second materials having different coefficients of thermal expansion. The method includes bonding a surface of a first substrate of a first material to a surface of a second substrate of a second material wherein the first substrate includes a zone of weakness therein to define a transfer layer adjacent the first surface, providing a stiffening substrate of a third material to maintain sufficient flatness and prevent breakage of the transfer layer during detachment from the first substrate, and detaching the transfer layer from the first substrate along the zone of weakness to form a heterogeneous assembly of the transfer layer and second substrate. The stiffening substrate is bonded to one of the first or second substrates and the third material has a coefficient of thermal expansion that is the same as or close to that of the material of the substrate to which the stiffening substrate is bonded to facilitate a successful detachment of the transfer layer from the first substrate.

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