High temperature Schottky barrier bypass diodes

Details High temperature Schottky barrier bypass diodes High temperature Schottky barrier bypass diodes

1991-09-04

1992-08-11

Prenty, Mark V.

357 30, 357 68, 357 71, H01L 2948, H01L 2348

Patent

active

051384035

ABSTRACT:
A high temperature Schottky barrier diode utilizing a refractory metal with a p-type gallium arsenide wafer can be used as a by-pass diode for solar cell arrays. The diode structure can be integrally formed with a solar cell having a high temperative metallized contact grid.

REFERENCES:
patent: 4771017 (1988-09-01), Tobin et al.
patent: 4889565 (1989-12-01), Fan et al.
"High Temperature Contact Metallization for Advanced Solar Cells", Horne et al., Aug. 1984; pp. 1-64.
"Development of Metallization for GaAs and AlGaAs Concentrator Solar Cells", Stephen P. Tobin; Apr. 1987; pp. 1-104.
Publication-Fourteenth IEEE Photovoltaic Specialists Conference (1980), Gonzalez and Weaver.
Publication of Green et al., (1984), discloses the use of silicon solar cells.
Publication of Waldrop (1982), use of evaporated Schottky barrier contacts to gallium arsenide surfaces.
Publication of Maki and Ehrlich (1987), method of forming diode structures on gallium arsenide materials.
Publication of Kuriyama (1987), discloses the use of tungsten and silicon to form Schottky barrier diodes w/ gallium arsenide surfaces.
Publication of Yu et al., (1986), formation of tungsten gallium arsenide Schottky barrier diodes.
Publication of Waldrop et al., (1982), use of refractory metals to form Schottky barrier contacts to GaAs.
Publication of Bater et al., (1987), discloses the deposition of tungsten an GaAs to form Schottky barrier structures.
Publication of Callegari et al., (1987), use of tungsten in forming Schottky contacts to n-GaAs surfaces.
Publication of Rasch & Roy (1981), Use of Silicon Bypass Diodes Having a Structure Shown in FIG. 2.
Publication of Cox et al. (1982), Use of Bypass Diodes, p. 835.

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