Semiconductor electron emitting device

Details Semiconductor electron emitting device Semiconductor electron emitting device

1991-12-13

1992-08-11

Prenty, Mark V.

357 13, 357 68, 357 91, H01L 2948, H01L 2990, H01L 2348

Patent

active

051384027

ABSTRACT:
A semiconductor electron emitting device comprising a Schottky electrode and a p type semiconductor. The Schottky electrode is disposed on the p type semiconductor and defines a junction formed therebetween. The p type semiconductor has an impurity concentration within a predetermined range adapted for causing an avalanche breakdown responsive to a reverse biasing voltage applied between said p type semiconductor and said Schottky electrode. Electrons are emitted from the Schottky electrode in response to the application of the reverse bias voltage.

REFERENCES:
patent: 4259678 (1981-03-01), Van Gorkom
patent: 4303930 (1981-12-01), Van Gorkom
Philips Technical Review, vol. 43, No. 3, Jan. 1987, Van Gorkom, G., et al. "Silicon Cold Cathodes", pp. 49-56.
Applied Physics Letters, vol. 13, No. 7, Oct. 1, 1968, Williams, R., et al. "Electron Emission From The Schottky Barrier Structure ZnS: Pt: Cs", pp. 231-233.

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