Image sensor with an avalanche diode forming an optical shutter

Details Image sensor with an avalanche diode forming an optical shutter Image sensor with an avalanche diode forming an optical shutter

1989-11-22

1992-02-04

Groody, James J.

Facsimile and static presentation processing

Facsimile

Recording apparatus

35821326, 357 13, H04N 314, H04N 5335

Patent

active

050863428

ABSTRACT:
A semiconductor image sensor having a CCD-structure, includes sensor elements arranged in a linear or in a two-dimensional array suitable for a parallel or serial read-out of information. An avalanche diode is arranged between a p-layer and a high resistance n-layer on a light inlet side of the semiconductor device. The charge carriers coming from the avalanche diode are transferred to a CCD-structure in response to an electrical control signal applied to the p-layer and the n-layer of the image sensor. This construction forms an optical shutter that is controllable by pulses of short duration within the range of about 1 to 10 ns.

REFERENCES:
patent: 3533061 (1970-10-01), Treiterer
patent: 3737851 (1973-06-01), Marshall et al.
patent: 3745424 (1973-07-01), Ohuchi et al.
patent: 3889284 (1975-06-01), Schiel
patent: 4083062 (1978-04-01), Ohuchi et al.
patent: 4212019 (1980-07-01), Wataze et al.
patent: 4382187 (1983-05-01), Fraleux et al.
patent: 4447800 (1984-05-01), Kasuya et al.
patent: 4489350 (1984-12-01), Kimura
patent: 4556912 (1985-12-01), Yamanaka et al.
patent: 4665325 (1987-05-01), Yamada et al.
patent: 4731641 (1988-03-01), Matsushima et al.
patent: 4875100 (1989-10-01), Yonemoto et al.
patent: 4901154 (1990-02-01), Suga et al.
patent: 4902886 (1990-02-01), Smisko
patent: 4939579 (1990-07-01), Nakamura
patent: 4951147 (1990-08-01), Aknar et al.
patent: 4982255 (1991-01-01), Tomita
Elektronikpraxis (Nr. 9) Sep. 1978, pp. 12-14, "Zeilen-und flaechenhafte Halbleiter-Bildsensoren", H. Herbst.
The Radio and Electronic Engineer, vol. 50, No. 5, May 1980, "Development of c.c.d. area image sensors for 625-line television applications", by D. J. Burt, pp. 205-212.
Bild der Wissenschaft, pp. 134-135, Nr. 10, 1988, "Prometheus-Steuermann durch den Verkehr von morgen".
"Integrated Optics: Theory and Technology", 2 cover sheets and pp. 246-254, Published by Springer-Verlag, Berlin, Heidelberg, New York, 1982.
"Multi-Element Reachthrough Avalanche Photodiodes", by Paul P. Webb, et al., IEEE Transactions on Electron Devices, vol. ED-31, No. 9, Sep., 1984, pp. 1206 to 1212.
"Neue Entwicklungen bei Halbleiter-Bildsensoren", F. & KT CCD-Kamera, by Siegfried Koenig, (Fernseh-Und Kino-Technik, 39. Jarhgang.Nr.1/1985.
"Silicide camera mid-wave infrared imagery", by Benjamin R. Capone et al., 186/SPIE vol. 570, Solid State Imaging Arrays (1985), pp. 186-190.
"Autos am laufenden Band", Verkehrstechnik, Funkschau 14/1988, pp. 42-44.

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