Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2005-11-22
2005-11-22
Ho, Tuan (Department: 2615)
Television
Camera, system and detail
Solid-state image sensor
C348S301000
Reexamination Certificate
active
06967682
ABSTRACT:
In a photoelectric converting device, a photoelectric current (electric signal) generated by light entering a photodiode PD causes the gate voltage of MOS transistors T1and T2to rise, and thus a current corresponding to this gate voltage flows through the MOS transistor T2into a capacitor C, shifting the voltage at the node “a” between the MOS transistor T2and the capacitor C. Here, when the voltage φVPS applied to the source of the MOS transistor T1is adjusted in such a way that the MOS transistor T1operates in a subthreshold region below its threshold level, the voltage at the node “a” varies on a natural-logarithm basis with respect to the photoelectric current. By contrast, when the voltage φVPS applied to the source of the MOS transistor T1is kept approximately equal to a direct-current voltage VPD, the voltage at the node “a” varies on a linear basis with respect to the photoelectric current.
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Ho Tuan
Minolta Co. , Ltd.
Sidley Austin Brown & Wood LLP
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