Photomask, the manufacturing method, a patterning method,...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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06927002

ABSTRACT:
To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.

REFERENCES:
patent: 6007969 (1999-12-01), Hatakeyama et al.
patent: 2002/0051928 (2002-05-01), Zampini
patent: 2002/0182541 (2002-12-01), Gonsalves
patent: 56-030129 (1981-03-01), None
patent: 5-289307 (1993-11-01), None
patent: 2000-91192 (2000-03-01), None

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