Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2005-06-07

2005-06-07

Harvey, Minsun O. (Department: 2828)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S057000, C257S069000, C257S192000, C257S745000

Reexamination Certificate

active

06903392

ABSTRACT:
A semiconductor device having a single-crystal substrate made of a material different from nitride III-V compound semiconductors, and a device made on one major surface of said single-crystal substrate by using III-V compound semiconductors, including electrical connection to said device being made through a via hole formed in said single-crystal substrate and method of making the same.

REFERENCES:
patent: 5034954 (1991-07-01), Seiwa
patent: 5449930 (1995-09-01), Zhou
patent: 5483092 (1996-01-01), Kosaki
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5747857 (1998-05-01), Eda et al.
patent: 5862167 (1999-01-01), Sassa et al.
patent: 5905275 (1999-05-01), Nunoue et al.
patent: 6163557 (2000-12-01), Dunnrowicz et al.

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