Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2005-11-15
2005-11-15
Nguyen, Vinh P. (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S765010, C324S762010
Reexamination Certificate
active
06965247
ABSTRACT:
The present invention generally relates to a semiconductor device and more specifically to a semiconductor device for detecting and adjusting threshold voltage variations of an integrated semiconductor device implemented in sub-micron technology, i.e. transistors, and a method related thereto. To adjust the threshold voltage variation induced by the fabrication process in the semiconductor a comparison between a device under test and a fixed voltage value is provided. According to the invention, a constant current is injected in the transistor and the gate-to-source potential is fixed by a bias voltage. According to the comparison result, a well potential is provided to the semiconductor device to adjust the threshold voltage.
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Walker et al., “A Parallel Measurement System for the Extraction of Level 3 Spice Parameters”, Proc. IEEE Int. Conf. On Microelectronic Test Structure, Edinburgh XP010000918, p. 135, left-hand col., lines 1-140. right-hand col. last line. Figure 1a. (Mar. 1990) .
Infineon - Technologies AG
Moore & Van Allen PLLC
Nguyen Vinh P.
Phillips Steven B.
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