Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-12-13

2005-12-13

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257S760000, C257S774000

Reexamination Certificate

active

06975033

ABSTRACT:
A semiconductor device includes a semiconductor substrate on which an element is formed, a low dielectric constant insulation film formed over the semiconductor substrate and having a relative dielectric constant of 3 or lower, a plug and a wiring layer buried in the low dielectric constant insulation film, and a high Young's modulus insulation film having a Young's modulus of 15 GPa or higher and formed in contact with a side of the plug between the low dielectric constant insulation film and the plug.

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Korean Patent Office Action dated Dec. 13, 2004, issued in counterpart application KR 10-2002-0083208.
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