Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With heat sink embedded in encapsulant
Reexamination Certificate
2005-12-27
2005-12-27
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With heat sink embedded in encapsulant
C257S706000, C257S712000
Reexamination Certificate
active
06979909
ABSTRACT:
A lead frame (2a) has a die bonding pad portion (3) and an inner lead portion (4). A power element (1) is mounted on the die bonding pad portion (3) of the lead frame (2a) and is bonded to the die bonding pad portion (3) with solder (9). The power element (1) has electrodes connected through an aluminum wire (8) to the inner lead portion (4) of another lead frame (2b). A metal block (5) has a surface formed with a protrusion bonded to the lead frame (2a) in opposed relation to the power element (1). A resin package (6) has an insulation layer (7) formed on the opposite surface of the metal block (5) from the lead frame (2a), and seals the power element (1), the lead frames (2a, 2b) and the metal block (5). An external heat dissipator (11) is mounted on a surface of the insulation layer (7) opposite from the metal block (5). A semiconductor device and a method of manufacturing the same improve a heat dissipation characteristic and maintain a dielectric breakdown voltage.
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U.S. Appl. No. 09/895,025, filed Jul. 2, 2001, Pending.
U.S. Appl. No. 09/895,319, filed Jul. 2, 2001, Pending.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen DiLinh
Pham Hoai
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