Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-11-22
2005-11-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C257S030000, C257S031000, C257S246000, C257S392000, C257S395000, C257S596000, C257S759000, C257S260000
Reexamination Certificate
active
06967344
ABSTRACT:
Multi-terminal electronic switching devices comprising a chalcogenide material switchable between a resistive state and a conductive state. The devices include a first terminal, a second terminal and a control terminal. Application of a control signal to the control terminal modulates the conductivity of the chalcogenide material between the first and second terminals and/or the threshold voltage required to switch the chalcogenide material between the first and second terminals from a resistive state to a conductive state. The devices may be used as interconnection devices or signal providing devices in circuits and networks.
REFERENCES:
patent: 2004/0140523 (2004-07-01), Hudgens et al.
Ovshinsky Stanford R.
Pashmakov Boil
Bray Kevin L.
Energy Conversion Devices Inc.
Erdem Fazli
Flynn Nathan J.
Siskind Marvin S.
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