Solid-state imaging device and method for producing the same

Details Solid-state imaging device and method for producing the same Solid-state imaging device and method for producing the same

2005-11-08

2005-11-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S225000, C257S231000, C257S232000, C438S060000

Reexamination Certificate

active

06963093

ABSTRACT:
A solid-state imaging device includes a plurality of vertical charge transferring portions, and a horizontal charge transferring portion connected to at least one end of each of the vertical charge transferring portions. A vertical transfer channel region of a first conductivity, an element isolating region of a second conductivity and a vertical well region of the second conductivity that constitute the vertical charge transferring portion are extended up to the connection portion between the vertical charge transferring portions and the horizontal charge transferring portion, and the end portions of the extended regions of the vertical transfer channel region of the first conductivity and the vertical well region of the second conductivity on the side of the horizontal charge transferring portion are positioned more on the side of the horizontal charge transferring portion than the end portion of the final vertical transfer electrode on the side of the horizontal charge transferring portion, and are positioned within 1.5 μm from the end portion of the element isolating region of the second conductivity on the side of the horizontal charge transferring portion.

REFERENCES:
patent: 5742081 (1998-04-01), Furumiya
patent: 6114717 (2000-09-01), Uchiya
patent: 6278487 (2001-08-01), Nakashiba
patent: 5-29599 (1993-02-01), None
patent: 6-318691 (1994-11-01), None
patent: 9-237886 (1997-09-01), None
patent: 10-135439 (1998-05-01), None

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