Processing method and apparatus for annealing and doping...

Details Processing method and apparatus for annealing and doping... Processing method and apparatus for annealing and doping...

2005-06-28

2005-06-28

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

Reexamination Certificate

active

06911717

ABSTRACT:
A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.

REFERENCES:
patent: 5231047 (1993-07-01), Ovshinsky et al.
patent: 5386798 (1995-02-01), Lowndes et al.
patent: 5499599 (1996-03-01), Lowndes et al.
patent: 8-51207 (1996-02-01), None
patent: 2002-122881 (2002-04-01), None

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